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HIGH-SPEED 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM
Features
x x
IDT709279S/L
x
x
x
True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed clock to data access - Commercial: 9/12/15ns (max.) - Industrial: 12ns (max.) Low-power operation - IDT709279S Active: 950mW (typ.) Standby: 5mW (typ.) - IDT709279L Active: 950mW (typ.) Standby: 1mW (typ.) Flow-Through or Pipelined output mode on either port via the FT/PIPE pin Counter enable and reset features
x
x
x
x x
x
Dual chip enables allow for depth expansion without additional logic Full synchronous operation on both ports - 4ns setup to clock and 1ns hold on all control, data, and address inputs - Data input, address, and control registers - Fast 9ns clock to data out in the Pipelined output mode - Self-timed write allows fast cycle time - 15ns cycle time, 66MHz operation in Pipelined output mode Separate upper-byte and lower-byte controls for multiplexed bus and bus matching compatibility TTL- compatible, single 5V (10%) power supply Industrial temperature range (-40C to +85C) is available for selected speeds Available in a 100-pin Thin Quad Flatpack (TQFP) package
Functional Block Diagram
R/WL UBL CE0L CE1L LBL OEL
1 0 0/1 1 0 0/1
R/WR UBR CE0R CE1R LBR OER
FT/PIPEL I/O8L-I/O15L
0/1
1b 0b b a 1a 0a
0a 1a
a b 0b 1b
0/1
FT/PIPER I/O8R-I/O15R
,
I/O Control I/O0L-I/O7L
I/O Control I/O0R-I/O7R
A14L A0L CLKL ADSL CNTENL CNTRSTL Counter/ Address Reg. MEMORY ARRAY Counter/ Address Reg.
A14R A0R CLKR ADSR CNTENR CNTRSTR
3243 drw 01
AUGUST 2001
1
(c)2001 Integrated Device Technology, Inc. DSC-3243/12
IDT709279S/L High-Speed 32K x 16 Synchronous Dual-Port Static RAM
Preliminary Industrial and Commercial Temperature Ranges
Description
The IDT709279 is a high-speed 32K x 16 bit synchronous DualPort RAM. The memory array utilizes Dual-Port memory cells to allow simultaneous access of any address from both ports. Registers on control, data, and address inputs provide minimal setup and hold times. The timing latitude provided by this approach allows systems to be designed with very short cycle times. With an input data register, the IDT709279 has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. Fabricated using IDT's CMOS high-performance technology, these devices typically operate on only 950mW of power.
Pin Configurations(1,2,3)
Index
A9L A10L A11L A12L A13L A14L NC NC NC LBL UBL CE0L CE1L CNTRSTL Vcc R/WL OEL FT/PIPEL GND I/O15L I/O14L I/O13L I/O12L I/O11L I/O10L
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76 1 75 2 74 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 73 72 71 70 69 68 67
A8L A7L A6L A5L A4L A3L A2L A1L A0L CNTENL CLKL ADSL GND ADSR CLKR CNTENR A0R A1R A2R A3R A4R A5R A6R A7R A8R
IDT709279PF PN100-1(4) 100-Pin TQFP Top View(5)
66 65 64 63 62 61 60 59 58 57 56 55 54 53 52
51 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
A9R A10R A11R A12R A13R A14R NC NC NC LBR UBR CE0R CE1R CNTRSTR GND R/WR OER FT/PIPER GND I/O15R I/O14R I/O13R I/O12R I/O11R I/O10R
I/O9L I/O8L Vcc I/O7L I/O6L I/O5L I/O4L I/O3L I/O2L GND I/OIL I/O0L GND I/O0R I/O1R I/O2R I/O3R I/O4R I/O5R I/O6R Vcc I/O7R I/O8R I/O9R NC
NOTES: 1. All VCC pins must be connected to power supply. 2. All GND pins must be connected to ground supply. 3. Package body is approximately 14mm x 14mm x 1.4mm 4. This package code is used to reference the package diagram. 5. This text does not indicate orientation of the actual part-marking.
3243 drw 02
2 6.42
IDT709279S/L High-Speed 32K x 16 Synchronous Dual-Port Static RAM
Preliminary Industrial and Commercial Temperature Ranges
Pin Names
Left Port CE0L, CE1L R/WL OEL A0L - A14L I/O0L - I/O15L CLKL UBL LBL ADSL CNTENL CNTRSTL FT/PIPEL Right Port CE0R, CE1R R/WR OER A0R - A14R I/O0R - I/O15R CLKR UBR LBR ADSR CNTENR CNTRSTR FT/PIPER VCC GND Names Chip Enables Read/Write Enable Output Enable Address Data Input/Output Clock Upper Byte Select Lower Byte Select Address Strobe Counter Enable Counter Reset Flow-Through/Pipeline Power Ground
3243 tbl 01
Truth Table IRead/Write and Enable Control(1,2,3)
OE X X X X X X L L L H CLK X CE0 H X L L L L L L L L CE1 X L H H H H H H H H UB X X H L H L L H L L LB X X H H L L H L L L R/W X X X L L L H H H X Upper Byte I/O8-15 High-Z High-Z High-Z DIN High-Z DIN DOUT High-Z DOUT High-Z Lower Byte I/O0-7 High-Z High-Z High-Z High-Z DIN DIN High-Z DOUT DOUT High-Z Mode Deselected--Power Down Deselected--Power Down Both Bytes Deselected Write to Upper Byte Only Write to Lower Byte Only Write to Both Bytes Read Upper Byte Only Read Lower Byte Only Read Both Bytes Outputs Disabled
3243 tbl 02
NOTES: 1. "H" = VIH, "L" = VIL, "X" = Don't Care. 2. ADS, CNTEN, CNTRST = X. 3. OE is an asynchronous input signal.
6.42 3
IDT709279S/L High-Speed 32K x 16 Synchronous Dual-Port Static RAM
Preliminary Industrial and Commercial Temperature Ranges
Truth Table IIAddress Counter Control(1,2)
Address X An An X Previous Address X X Ap Ap Addr Used 0 An Ap Ap + 1 CLK ADS X L(4) H H CNTEN X X H L(5) CNTRST L(4) H H H I/O(3) DI/O(0) DI/O (n) DI/O(p) DI/O(p+1) Counter Reset to Address 0 External Address Used External Address Blocked--Counter disabled (Ap reused) Counter Enabled--Internal Address generation
3243 tbl 03
MODE
NOTES: 1. "H" = VIH, "L" = VIL, "X" = Don't Care. 2. CE0, LB, UB, and OE = VIL; CE1 and R/W = VIH. 3. Outputs configured in Flow-Through Output mode: if outputs are in Pipelined mode the data out will be delayed by one cycle. 4. ADS is independent of all other signals including CE0, CE1, UB and LB. 5. The address counter advances if CNTEN = VIL on the rising edge of CLK, regardless of all other signals including CE0, CE1, UB and LB.
Recommended DC Operating Recommended Operating (1) Conditions Temperature and Supply Voltage
Grade Commercial Industrial Ambient Temperature 0OC to +70OC -40OC to +85OC GND 0V 0V Vcc 5.0V + 10% 5.0V + 10%
3243 tbl 04
Symbol VCC GND VIH VIL
Parameter Supply Voltage Ground Input High Voltage Input Low Voltage
Min. 4.5 0 2.2 -0.5(2)
Typ. 5.0 0
____
Max. 5.5 0 6.0(1) 0.8
Unit V V V V
3243 tbl 05
NOTES: 1. This is the parameter TA. This is the "instant on" case temperature.
____
NOTES: 1. VTERM must not exceed Vcc + 10%. 2. VIL > -1.5V for pulse width less than 10ns.
Absolute Maximum Ratings(1)
Symbol VTERM
(2)
CAPACITANCE(1)
Unit V Symbol CIN COUT
(3)
Rating Terminal Voltage with Respect to GND Temperature Under Bias Storage Temperature DC Output Current
Commercial & Industrial -0.5 to +7.0
(TA = +25C, f = 1.0MHz)
Parameter Input Capacitance Output Capacitance Conditions(2) VIN = 3dV VOUT = 3dV Max. 9 10 Unit pF pF
3243 tbl 07
TBIAS TSTG IOUT
-55 to +125 -65 to +150 50
o
C C
o
mA
3243 tbl 06
NOTES: 1. These parameters are determined by device characterization, but are not production tested. 2. 3dV references the interpolated capacitance when the input and output switch from 0V to 3V or from 3V to 0V. 3. COUT also references CI/O.
NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VTERM must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns maximum, and is limited to < 20mA for the period of VTERM > Vcc + 10%.
4 6.42
IDT709279S/L High-Speed 32K x 16 Synchronous Dual-Port Static RAM
Preliminary Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating Temperature Supply Voltage Range (VCC = 5.0V 10%)
709279S/L Symbol |ILI| |ILO| VOL VOH Parameter Input Leakage Current(1) Output Leakage Current Output Low Voltage Output High Voltage Test Conditions VCC = 5.5V, VIN = 0V to VCC CE0 = VIH or CE1 = VIL, VOUT = 0V to VCC IOL = +4mA IOH = -4mA Min.
___ ___ ___
Max. 10 10 0.4
___
Unit A A V V
3243 tbl 08
2.4
NOTE: 1. At Vcc < 2.0V input leakages are undefined.
DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(6) (VCC = 5V 10%)
709279X9 Com'l Only Symbol ICC Parameter Dynamic Operating Current (Both Ports Active) Test Condition CEL and CER= VIL Outputs Disabled f = fMAX(1) Version COM'L IND COM'L IND ISB2 Standby Current (One Port - TTL Level Inputs) CE"A" = VIL and CE"B" = VIH(3) Active Port Outputs Disabled, f=fMAX(3) Both Ports CER and CEL > VCC - 0.2V VIN > VCC - 0.2V or VIN < 0.2V, f = 0(2) CE"A" < 0.2V and CE"B" > VCC - 0.2V (5) VIN > VCC - 0.2V or VIN < 0.2V, Active Port Outp uts Disabled , f = fMAX(1) COM'L IND COM'L IND COM'L IND S L S L S L S L S L S L S L S L S L S L Typ. (4) 210 210
____ ____
709279X12 Com'l & Ind Typ. (4) 200 200 200 200 50 50 50 50 130 130 130 130 1.0 0.2 1.0 0.2 120 120 120 120 Max. 345 305 380 340 110 90 125 105 230 200 245 215 15 5 15 5 205 185 220 200
709279X15 Com'l Only Typ. (4) 190 190
____ ____
Max. 390 350
____ ____
Max. 325 285
____ ____
Unit mA
ISB1
Standby Current (Both Ports - TTL Level Inputs)
CEL = CER = VIH f = fMAX(1)
50 50
____ ____
135 115
____ ____
50 50
____ ____
110 90
____ ____
mA
140 140
____ ____
270 240
____ ____
120 120
____ ____
220 190
____ ____
mA
ISB3
Full Standby Current (Both Ports CMOS Level Inputs)
1.0 0.2
____ ____
15 5
____ ____
1.0 0.2
____ ____
15 5
____ ____
mA
ISB4
Full Standby Current (One Port CMOS Level Inputs)
130 130
____ ____
245 225
____ ____
110 110
____ ____
195 175
____ ____
mA
3243 tbl 09
NOTES: 1. At f = fMAX, address and control lines (except Output Enable) are cycling at the maximum frequency clock cycle of 1/tCYC, using "AC TEST CONDITIONS" at input levels of GND to 3V. 2. f = 0 means no address, clock, or control lines change. Applies only to input at CMOS level standby. 3. Port "A" may be either left or right port. Port "B" is the opposite from port "A". 4. Vcc = 5V, TA = 25C for Typ, and are not production tested. ICC DC(f=0) = 150mA (Typ). 5. CEX = VIL means CE0X = VIL and CE1X = VIH CEX = VIH means CE0X = VIH or CE1X = VIL CEX < 0.2V means CE0X < 0.2V and CE1X > VCC - 0.2V CEX > VCC - 0.2V means CE0X > VCC - 0.2V or CE1X < 0.2V "X" represents "L" for left port or "R" for right port. 6. 'X' in part numbers indicate power rating (S or L).
6.42 5
IDT709279S/L High-Speed 32K x 16 Synchronous Dual-Port Static RAM
Preliminary Industrial and Commercial Temperature Ranges
AC Test Conditions
Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels Output Load GND to 3.0V 3ns Max. 1.5V 1.5V Figures 1,2 and 3
3243 tbl 10
5V 893 DATAOUT 347 30pF DATAOUT 347
5V 893
5pF*
3243 drw 04
3243 drw 05
Figure 1. AC Output Test load.
Figure 2. Output Test Load (For tCKLZ, tCKHZ, tOLZ, and tOHZ). *Including scope and jig.
8 7 6 5 tCD1, tCD2 (Typical, ns) 4 3 2 1 0 -1
- 10pF is the I/O capacitance of this device, and 30pF is the AC Test Load Capacitance
20 40 60 80 100 120 140 160 180 200 Capacitance (pF)
3243 drw 06
,
Figure 3. Typical Output Derating (Lumped Capacitive Load).
6 6.42
IDT709279S/L High-Speed 32K x 16 Synchronous Dual-Port Static RAM
Preliminary Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the Operating Temperature Range (Read and Write Cycle Timing)(3,4) (VCC = 5V 10%, TA = 0C to +70C)
709279X9 Com'l Only Symbol tCYC1 tCYC2 tCH1 tCL1 tCH2 tCL2 tR tF tSA tHA tSC tHC tSB tHB tSW tHW tSD tHD tSAD tHAD tSCN tHCN tSRST tHRST tOE tOLZ tOHZ tCD1 tCD2 tDC tCKHZ tCKLZ Clo ck Cycle Tim e (Flo w-Thro ug h) Clo ck Cycle Tim e (P ip e line d )
(2) (2)
709279X12 Com'l & Ind Min. 30 20 12 12 8 8
____ ____
709279X15 Com'l Only Min. 35 25 12 12 10 10
____ ____
Parameter
Min. 25 15 12 12 6 6
____ ____
Max.
____ ____ ____ ____ ____ ____
Max.
____ ____ ____ ____ ____ ____
Max.
____ ____ ____ ____ ____ ____
Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
Clo ck Hig h Tim e (Flo w-Thro ug h)(2) Clo ck Lo w Tim e (Flo w-Thro ug h) Clo ck Hig h Tim e (P ip e lined )
(2) (2)
Clo ck Lo w Tim e (P ip e lined )(2) Clo ck Rise Tim e Clo ck Fall Tim e A d d re ss S e tup Tim e A d d re ss Ho ld Tim e Chip E nab le S e tup Tim e Chip E nab le Ho ld Tim e B yte E nab le S e tup Tim e B yte E nab le Ho ld Tim e R/W S e tup Tim e R/W Ho ld Time Inp ut Data S e tup Tim e Inp ut Data Ho ld Tim e ADS S e tup Tim e ADS Ho ld Time CNTEN S e tup Tim e CNTEN Ho ld Time CNTRST S e tup Tim e CNTRST Ho ld Time Outp ut E nab le to Data Valid Outp ut E nab le to Outp ut Lo w-Z
(1) (1)
3 3
____ ____ ____ ____ ____ ____ ____ ____ ____ ____
3 3
____ ____ ____ ____ ____ ____ ____ ____ ____ ____
3 3
____ ____ ____ ____ ____ ____ ____ ____ ____ ____
4 1 4 1 4 1 4 1 4 1 4 1 4 1 4 1
____
4 1 4 1 4 1 4 1 4 1 4 1 4 1 4 1
____
4 1 4 1 4 1 4 1 4 1 4 1 4 1 4 1
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
12
____
12
____
15
____
2 1
____ ____
2 1
____ ____
2 1
____ ____
Outp ut E nab le to Outp ut Hig h-Z
7 20 9
____
7 25 12
____
7 30 15
____
Clo ck to Data Valid (Flo w-Thro ug h)(2) Clo ck to Data Valid (P ip e line d )
(2)
Data Outp ut Ho ld A fte r Clock Hig h Clo ck Hig h to Outp ut Hig h-Z Clo ck Hig h to Outp ut Lo w-Z
(1)
2 2 2
2 2 2
2 2 2
9
____
9
____
9
____
(1)
Port-to-Port Delay tCWDD tCCS W rite Po rt Clo ck Hig h to Re ad Data De lay Clo ck-to-Clo ck S e tup Time
____ ____
35 15
____ ____
40 15
____ ____
50 20
ns ns
3243 tbl 11
NOTES: 1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2). This parameter is guaranteed by device characterization, but is not production tested. 2. The Pipelined output parameters (tCYC2, tCD2) apply to either or both left and right ports when FT/PIPE = VIH. Flow-through parameters (tCYC1, tCD1) apply when FT/PIPE = VIL for that port. 3. All input signals are synchronous with respect to the clock except for the asynchronous Output Enable (OE) and FT/PIPE. FT/PIPE should be treated as a DC signal, i.e. steady state during operation. 4. 'X' in part number indicates power rating (S or L).
6.42 7
IDT709279S/L High-Speed 32K x 16 Synchronous Dual-Port Static RAM
Preliminary Industrial and Commercial Temperature Ranges
Timing Waveform of Read Cycle for Flow-Through Output (FT/PIPE"X" = VIL)(3,7)
tCYC1 tCH1 CLK CE0 tSC CE1 tSB UB, LB R/W tHB tSB tHB tHC tSC
(4)
tCL1
tHC
tSW tSA
tHW tHA An + 1 tCD1 tDC Qn tCKLZ
(1)
ADDRESS
(5)
An
An + 2
An + 3 tCKHZ
(1)
DATAOUT
Qn + 1 tOHZ
(1)
Qn + 2 tOLZ
(1)
tDC
OE
(2)
tOE
3243 drw 07
Timing Waveform of Read Cycle for Pipelined Output (FT/PIPE"X" = VIH)(3,7)
tCYC2 tCH2 CLK CE0 tSC CE1 UB, LB tSB tHB tSB
(6)
tCL2
tHC
tSC
(4)
tHC
tHB
R/W
tSW tSA
tHW tHA An + 1 (1 Latency) An + 2 tDC Qn tCKLZ
(1)
ADDRESS
(5)
An
An + 3
tCD2
DATAOUT
Qn + 1 tOHZ
(1)
Qn + 2 tOLZ
(1)
(6)
OE
(2)
tOE
3243 drw 08
NOTES: 1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2). 2. OE is asynchronously controlled; all other inputs are synchronous to the rising clock edge. 3. ADS = VIL, CNTEN and CNTRST = VIH. 4. The output is disabled (High-Impedance state) by CE0 = VIH, CE1 = VIL, UB = VIH, or LB = VIH following the next rising edge of the clock. Refer to Truth Table 1. 5. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 6. If UB or LB was HIGH, then the Upper Byte and/or Lower Byte of DATAOUT for Qn + 2 would be disabled (High-Impedance state). 7. "x" denotes Left or Right port. The diagram is with respect to that port.
8 6.42
IDT709279S/L High-Speed 32K x 16 Synchronous Dual-Port Static RAM
Preliminary Industrial and Commercial Temperature Ranges
Timing Waveform of a Bank Select Pipelined Read(1,2)
tCH2 CLK tSA ADDRESS(B1) tHA A0 tSC tHC tSC tHC tCD2 DATAOUT(B1) tSA ADDRESS(B2) tHA A0 A1 A2 A3 A4 A5 A6 Q0 tDC tCD2 tCKHZ Q1 tDC
(3)
tCYC2 tCL2
A1
A2
A3
A4
A5
A6
CE0(B1)
tCD2 Q3 tCKLZ
(3)
tCKHZ (3)
tSC tHC CE0(B2) tSC tHC tCD2 DATAOUT(B2) tCKLZ
(3)
tCKHZ (3) Q2
tCD2 tCKLZ (3)
3243 drw 09
Q4
Timing Waveform of a Bank Select Flow-Through Read(6)
tCH1 CLK tSA ADDRESS(B1) tHA A0 tSC tHC tSC tHC tCD1 DATAOUT(B1) tSA ADDRESS(B2) tHA A0 A1 A2 A3 A4 A5 A6 D0 tDC tCD1 D1 tDC tCKLZ
(1)
tCYC1 tCL1
A1
A2
A3
A4
A5
A6
CE0(B1)
tCKHZ
(1)
tCD1 D3 tCKHZ (1)
tCD1 D5 tCKLZ
(1)
tSC tHC CE0(B2) tSC tHC tCD1 DATAOUT(B2) tCKLZ
(1)
tCKHZ D2
(1)
tCD1 tCKLZ
(1)
tCKHZ D4
(1)
NOTES: 1. B1 Represents Bank #1; B2 Represents Bank #2. Each Bank consists of one IDT709279 for this waveform, and are setup for depth expansion in this example. ADDRESS(B1) = ADDRESS(B2) in this situation. 2. UB, LB, OE, and ADS = VIL; CE1(B1), CE1(B2), R/W, CNTEN, and CNTRST = VIH. 3. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2). 4. CE0, UB, LB, and ADS = VIL; CE1, CNTEN, and CNTRST = VIH. 5. OE = VIL for the Right Port, which is being read from. OE = VIH for the Left Port, which is being written to. 6. If tCCS < maximum specified, then data from right port READ is not valid until the maximum specified for tCWDD. If tCCS > maximum specified, then data from right port READ is not valid until tCCS + tCD1. tCWDD does not apply in this case.
3243 drw 09a
6.42 9
IDT709279S/L High-Speed 32K x 16 Synchronous Dual-Port Static RAM
Preliminary Industrial and Commercial Temperature Ranges
Timing Waveform with Port-to-Port Flow-Through Read(1,2,3,5)
CLK "A" tSW tHW R/W "A" tSA ADDRESS "A" tHA
NO MATCH
MATCH
tSD DATAIN "A"
tHD
VALID
tCCS CLK "B"
(4)
tCD1 R/W "B" tSW tSA ADDRESS "B" tHW tHA
NO MATCH
MATCH
tCWDD DATAOUT "B" tDC
(4)
tCD1
VALID VALID
tDC
3243 drw 10
NOTES: 1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2). 2. CE0, UB, LB, and ADS = VIL; CE1, CNTEN, and CNTRST = VIH. 3. OE = VIL for the Right Port, which is being read from. OE = VIH for the Left Port, which is being written to. 4. If tCCS < maximum specified, then data from right port READ is not valid until the maximum specified for tCWDD. If tCCS > maximum specified, then data from right port READ is not valid until tCCS + tCD1. tCWDD does not apply in this case. 5. All timing is the same for both left and right ports. Port "A" may be either left or right port. Port "B" is the opposite of Port "A".
10 6.42
IDT709279S/L High-Speed 32K x 16 Synchronous Dual-Port Static RAM
Preliminary Industrial and Commercial Temperature Ranges
Timing Waveform of Pipelined Read-to-Write-to-Read (OE = VIL)(3)
tCYC2 tCH2 tCL2 CLK
CE0 tSC tHC CE1 tSB UB, LB tSW tHW R/W tSW tHW tHB
ADDRESS
(4)
An tSA tHA
An +1
An + 2
An + 2 tSD tHD Dn + 2
An + 3
An + 4
DATAIN
(2)
tCD2 Qn READ
tCKHZ
(1)
tCKLZ
(1)
tCD2 Qn + 3
DATAOUT
NOP
(5)
WRITE
READ
3243 drw 11
Timing Waveforn of Pipelined Read-to-Write-to-Read (OE Controlled)(3)
tCYC2 tCH2 CLK CE0 tSC CE1 tSB UB, LB tSW tHW R/W tSW tHW tHB tHC tCL2
ADDRESS
(4)
An tSA tHA
An +1
An + 2 tSD tHD
An + 3
An + 4
An + 5
DATAIN
(2)
tCD2 Qn tOHZ (1)
Dn + 2
Dn + 3
tCKLZ(1)
tCD2 Qn + 4
DATAOUT
OE READ WRITE READ
3243 drw 12
NOTES: 1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2). 2. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals. 3. CE0, UB, LB, and ADS = VIL; CE1, CNTEN, and CNTRST = VIH. 4. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 5. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity.
6.42 11
IDT709279S/L High-Speed 32K x 16 Synchronous Dual-Port Static RAM
Preliminary Industrial and Commercial Temperature Ranges
Timing Waveform of Flow-Through Read-to-Write-to-Read (OE = VIL)(3)
tCH1 CLK tCYC1 tCL1
CE0 tSC CE1 tSB UB, LB tSW tHW R/W tSW tHW tHB tHC
ADDRESS
(4)
tSA DATAIN
(2)
An tHA
An +1
An + 2
An + 2 tSD tHD Dn + 2
An + 3
An + 4
tCD1 Qn tDC READ
tCD1 Qn + 1 tCKHZ (5) NOP
(1)
tCD1 Qn + 3 tCKLZ WRITE
(1)
tCD1
DATAOUT
tDC READ
3243 drw 13
Timing Waveform of Flow-Through Read-to-Write-to-Read (OE Controlled)(3)
tCYC1 tCH1 tCL1 CLK CE0 tSC tHC CE1 tSB UB, LB tSW tHW R/W ADDRESS
(4)
tHB
tSW tHW An tHA An +1 An + 2 tSD tHD Dn + 2
(2)
An + 3
An + 4
An + 5
tSA DATAIN
Dn + 3
tCD1 Qn
tDC
tOE tCD1
(1)
tCD1 Qn + 4 tDC
DATAOUT
tOHZ OE READ
(1)
tCKLZ
WRITE
READ
3243 drw 14
NOTES: 1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2). 2. Output state (High, Low, or High-impedance is determined by the previous cycle control signals. 3. CE0, UB, LB, and ADS = VIL; CE1, CNTEN, and CNTRST = VIH. 4. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 5. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity.
12 6.42
IDT709279S/L High-Speed 32K x 16 Synchronous Dual-Port Static RAM
Preliminary Industrial and Commercial Temperature Ranges
Timing Waveform of Pipelined Read with Address Counter Advance(1)
tCH2 CLK tSA ADDRESS An tSAD tHAD ADS tSAD tHAD tHA tCYC2 tCL2
CNTEN tCD2 DATAOUT Qx - 1(2) Qx tDC READ EXTERNAL ADDRESS READ WITH COUNTER Qn
tSCN tHCN
Qn + 1
Qn + 2(2)
Qn + 3
COUNTER HOLD
READ WITH COUNTER
3243 drw 15
Timing Waveform of Flow-Through Read with Address Counter Advance(1)
tCYC1 tCH1 CLK tSA ADDRESS tHA tCL1
An tSAD tHAD
ADS
tSAD tHAD tSCN tHCN
CNTEN tCD1 DATAOUT Qx(2) tDC READ EXTERNAL ADDRESS READ WITH COUNTER COUNTER HOLD READ WITH COUNTER
3243 drw 16
Qn
Qn + 1
Qn + 2
Qn + 3(2)
Qn + 4
NOTES: 1. CE0, OE, UB, and LB = VIL; CE1, R/W, and CNTRST = VIH. 2. If there is no address change via ADS = VIL (loading a new address) or CNTEN = VIL (advancing the address), i.e. ADS = VIH and CNTEN = VIH, then the data output remains constant for subsequent clocks.
6.42 13
IDT709279S/L High-Speed 32K x 16 Synchronous Dual-Port Static RAM
Preliminary Industrial and Commercial Temperature Ranges
Timing Waveform of Write with Address Counter Advance (Flow-Through or Pipelined Outputs)(1)
tCH2 CLK tSA ADDRESS tHA An tCYC2 tCL2
INTERNAL(3) ADDRESS tSAD tHAD ADS
An(1)
An + 1
An + 2
An + 3
An + 4
CNTEN tSD tHD DATAIN Dn WRITE EXTERNAL ADDRESS Dn + 1 Dn + 1 Dn + 2 Dn + 3 Dn + 4
WRITE WRITE WITH COUNTER COUNTER HOLD
WRITE WITH COUNTER
3243 drw 17
Timing Waveform of Counter Reset (Pipelined Outputs)(2)
tCH2 CLK tSA tHA
(4)
tCYC2 tCL2
ADDRESS INTERNAL(3) ADDRESS Ax(6) tSW tHW R/W ADS CNTEN tSRST tHRST CNTRST DATAIN
(5)
An
An + 1
An + 2
0
1
An
An + 1
tSD
tHD D0 Q0 Q1 READ ADDRESS n READ ADDRESS n+1
3243 drw 18
DATAOUT COUNTER RESET WRITE ADDRESS 0 READ ADDRESS 0 READ ADDRESS 1
Qn
NOTES: 1. CE0, UB, LB, and R/W = VIL; CE1 and CNTRST = VIH. 2. CE0, UB, LB = VIL; CE1 = VIH. 3. The "Internal Address" is equal to the "External Address" when ADS = VIL and equals the counter output when ADS = VIH. 4. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 5. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals. 6. No dead cycle exists during counter reset. A READ or WRITE cycle may be coincidental with the counter reset cycle. ADDR0 will be accessed. Extra cycles are shown here simply for clarification. 7. CNTEN = VIL advances Internal Address from `An' to `An +1'. The transition shown indicates the time required for the counter to advance. The `An +1'Address is written to during this cycle.
14 6.42
IDT709279S/L High-Speed 32K x 16 Synchronous Dual-Port Static RAM
Preliminary Industrial and Commercial Temperature Ranges
A Functional Description
The IDT709279 provides a true synchronous Dual-Port Static RAM interface. Registered inputs provide minimal set-up and hold times on address, data, and all critical control inputs. All internal registers are clocked on the rising edge of the clock signal, however, the self-timed internal write pulse is independent of the LOW to HIGH transition of the clock signal. An asynchronous output enable is provided to ease asynchronous bus interfacing. Counter enable inputs are also provided to stall the operation of the address counters for fast interleaved memory applications. A HIGH on CE0 or a LOW on CE1 for one clock cycle will power down the internal circuitry to reduce static power consumption. Multiple chip enables allow easier banking of multiple IDT709279's for depth expansion configurations. When the Pipelined output mode is enabled, two cycles are required with CE0 LOW and CE1 HIGH to reactivate the outputs.
Depth and Width Expansion
The IDT709279 features dual chip enables (refer to Truth Table I) in order to facilitate rapid and simple depth expansion with no requirements for external logic. Figure 4 illustrates how to control the various chip enables in order to expand two devices in depth. The 709279 can also be used in applications requiring expanded width, as indicated in Figure 4. Since the banks are allocated at the discretion of the user, the external controller can be set up to drive the input signals for the various devices as required to allow for 32-bit or wider applications.
A15
IDT709279
CE0 CE1 VCC
IDT709279
CE0 CE1 VCC
Control Inputs
Control Inputs
IDT709279
CE1 CE0
IDT709279
CE1 CE0 CNTRST CLK ADS CNTEN R/W OE
Control Inputs
Control Inputs
3243 drw 19
Figure 4. Depth and Width Expansion with IDT709279
6.42 15
IDT709279S/L High-Speed 32K x 16 Synchronous Dual-Port Static RAM
Preliminary Industrial and Commercial Temperature Ranges
Ordering Information
IDT XXXXX Device Type A Power 99 Speed A Package A Process/ Temperature Range
Blank I(1)
Commercial (0C to +70C) Industrial (-40C to +85C) 100-pin TQFP (PN100-1) 108-pin PGA (G108-1)
PF G
9 12 15 S L
Commercial Only Commercial & Industrial Commercial Only Standard Power Low Power
Speed in nanoseconds
709279 512K (32K x 16-Bit) Synchronous Dual-Port RAM
3243 drw 20
NOTES:
1. Industrial temperature range is available. For specific speeds, packages and powers contact your sales office.
Ordering Information for Flow-through Devices
Old Flow-through Part 70927S/L20 70927S/L25 70927S/L30 New Combined Part 709279S/L9 709279S/L12 709279S/L15
3243 tbl 12
16 6.42
IDT709279S/L High-Speed 32K x 16 Synchronous Dual-Port Static RAM
Preliminary Industrial and Commercial Temperature Ranges
Datasheet Document History
12/9/98: Initiated datasheet document history Converted to new format Cosmetic and typographical corrections Added additional notes to pin configurations Pages 13 & 14 Updated timing waveforms Page 15 Added Depth and Width Expansion section Changed drawing format Page 3 Deleted note 6 for Table II Replaced IDT logo Combined Pipelined 709279 family and Flow-through 70927 family offerings into one data sheet Changed 200mV in waveform notes to 0mV Added corresponding part chart with ordering information Page 1 Inserted diamond in copy Page 4 Changed information in Truth Table II, Increased storage temperature parameter, clarified TA parameter Page 5 Changed DC Electrical parameters-changed wording from "Open" to "Disabled" Page 16 Fixed typeface in heading Added Industrial Temperature Ranges and removed related notes Pages 1, 16 and Page Header Removed Preliminary status Page 5 & 7 Removed Industrial Temperature Ranges for 15ns speed from DC and AC Electrical Characteristics Page 16 Removed Industrial Temperature from 15ns speed in ordering information
6/3/99 11/10/99: 3/31/00:
5/24/00:
8/24/01:
CORPORATE HEADQUARTERS 2975 Stender Way Santa Clara, CA 95054
for SALES: 800-345-7015 or 408-727-611 6 fax: 408-492-8674 www.idt.com
for Tech Support: 831-754-4613 DualPortHelp@idt.com
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
6.42 17

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